Electronic properties of microcrystalline silicon

被引：45
|
作者：
Carius, R [1 ]
Finger, F [1 ]
Backhausen, U [1 ]
Luysberg, M [1 ]
Hapke, P [1 ]
Houben, L [1 ]
Otte, M [1 ]
Overhof, H [1 ]
机构：
[1] Forschungszentrum Julich, ISI, PV, D-52425 Julich, Germany
来源：
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷
关键词：
D O I：
10.1557/PROC-467-283
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic and optical properties of microcrystalline silicon films prepared by plasma enhanced chemical vapour deposition are investigated with Hall-effect, electrical conductivity, photothermal deflection spectroscopy and photoluminescence measurements. In particular, the influence of the grain size and the crystalline volume fraction on the conductivity, the carrier density and the Hall mobility is investigated in highly doped films. A percolation model is proposed to describe the observed transport data. Photoluminescence properties were studied in undoped films. It is proposed that the photoluminescence is due to recombination at structural defects similar to those observed in crystalline silicon.
引用
收藏
页码：283 / 294
页数：12
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