Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging

被引：27

作者：

Carlino, E

Modesti, S

Furlanetto, D

Piccin, M

Rubini, S

Franciosi, A

机构：

[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[2] Univ Trieste, Dipartimento Fis, I-34127 Trieste, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 04期

关键词：

D O I：

10.1063/1.1592314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The silicon concentration profile in Si-GaAs (001) superlattices grown by molecular beam epitaxy was investigated using scanning transmission electron microscopy high-angle annular dark-field (HAADF) imaging. Comparison with atomic resolution results obtained through cross-sectional scanning tunneling microscopy indicates that, by choosing appropriate experimental conditions, HAADF imaging can be used to gauge the Si distribution in GaAs on the atomic scale even without any image simulation. (C) 2003 American Institute of Physics.

引用

页码：662 / 664

页数：3

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