Wafer-Scale Polishing of Polycrystalline MPACVD-Diamond

Diamond offers great potential for use as a thermal spreader in various applications, including power electronics and radio-frequency (RF) applications. However, to be used as an efficient thermal spreader, the atomically smooth surface of the diamond is critical to be bonded with chips. Herein, a polishing technique for a 2-inch diameter wafer-scale bulk polycrystalline diamond substrate is proposed. In this work, 350 mu m thick polycrystalline diamond is grown by the microwave plasma-assisted chemical vapor deposition (MPACVD) technique on a Si substrate at a growth rate of 8 mu m/h. Thereafter, a three-step polishing process was applied to achieve an atomically smooth surface, consisting of grinding using a diamond slurry with an iron plate, ICP etching using the SF6 gas, and final mechanical polishing using a resin-bonded diamond wheel. Surface roughness of diamond characterized by atomic force microscopy showed the significantly reduced from 900 nm to 0.3 nm. Hence, this study provide the practical methods for obtaining atomically smooth diamond films suitable for thermal management in various areas including power electronics and RF devices.