A breakdown voltage multiplier for high voltage swing drivers

被引：35
|
作者：
Mandegaran, Sam
Hajimiri, Ali
机构：
[1] CALTECH, Microelect Lab, Pasadena, CA 91125 USA
[2] So Calif Sch Cinemat Arts, Los Angeles, CA 90089 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2007年 / 42卷 / 02期
关键词：
breakdown voltage (BV); breakdown voltage doubler; BV-doubler; breakdown voltage multiplier; BV-multiplier; driver; optical modulator driver; SiGe;
D O I：
10.1109/JSSC.2006.889390
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 Omega load was implemented in a SiGe BiCNIOS process. It uses the BV-Doubler topology to achieve output swings twice the collector-emitter breakdown voltage without stressing any single transistor.
引用
收藏
页码：302 / 312
页数：11
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