Impurity precipitation in Ge-doped CdTe crystals

被引：0
|
作者：
Shcherbak, LP [1 ]
Feichuk, PI [1 ]
Panchuk, OE [1 ]
机构：
[1] Fedkovich State Univ, UA-274012 Chernovtsy, Ukraine
来源：
INORGANIC MATERIALS | 1998年 / 34卷 / 01期
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The axial and radial (k(Ge) much less than 1) distributions of Ge in CdTe crystals grown by vertical directional solidification from melts containing less than or equal to 1 at. % Ge were studied by autoradiography, infrared microscopy, scanning electron microscopy, and electron-probe x-ray microanalysis. Three types of IR-opaque inclusions containing Te and predominantly Ge are identified, and the mechanisms of their formation are discussed.
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页码：17 / 22
页数：6
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