Impurity precipitation in Ge-doped CdTe crystals

被引：0
|
作者：
Shcherbak, LP [1 ]
Feichuk, PI [1 ]
Panchuk, OE [1 ]
机构：
[1] Fedkovich State Univ, UA-274012 Chernovtsy, Ukraine
来源：
INORGANIC MATERIALS | 1998年 / 34卷 / 01期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The axial and radial (k(Ge) much less than 1) distributions of Ge in CdTe crystals grown by vertical directional solidification from melts containing less than or equal to 1 at. % Ge were studied by autoradiography, infrared microscopy, scanning electron microscopy, and electron-probe x-ray microanalysis. Three types of IR-opaque inclusions containing Te and predominantly Ge are identified, and the mechanisms of their formation are discussed.
引用
收藏
页码：17 / 22
页数：6
相关论文
共 50 条
  • [1] CATHODOLUMINESCENCE CHARACTERIZATION OF GE-DOPED CDTE CRYSTALS
    PAL, U
    FERNANDEZ, P
    PIQUERAS, J
    SOCHINSKII, NV
    DIEGUEZ, E
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1992 - 1995
  • [2] Defect structure of Ge-doped CdTe
    Fiederle, M
    Babentsov, V
    Franc, J
    Fauler, A
    Benz, KW
    James, RB
    Cross, E
    JOURNAL OF CRYSTAL GROWTH, 2002, 243 (01) : 77 - 86
  • [3] Photoluminescence study of γ-irradiation effect on the defect structure in Ge-doped CdTe single crystals
    Nasieka, Iu
    Rashkovetskyi, L.
    Boyko, M.
    Strelchuk, V.
    Tsybrii, Z.
    Danilchenko, B.
    Shcherbak, L.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10, 2014, 11 (9-10): : 1510 - 1514
  • [4] PARAMETERS OF TRAPS IN GE-DOPED P-CDTE
    ZAYACHKIVSKII, VP
    SAVITSKII, AV
    NIKONYUK, ES
    KITSA, MS
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1974, (06): : 144 - 146
  • [5] Impurities in Ge-doped Silicon Single Crystals
    Brinkevich, D. I.
    Vabishchevich, S. A.
    Inorganic Materials, 33 (09):
  • [6] Exciton photoconductivity in Ge-doped GaSe crystals
    Mamedov, GM
    Karabulut, M
    Kodolbas, AO
    Öktü, Ö
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (14): : 2885 - 2891
  • [7] Impurities in Ge-doped silicon single crystals
    Brinkevich, DI
    Vabishchevich, SA
    INORGANIC MATERIALS, 1997, 33 (09) : 889 - 891
  • [8] HYDROXYL DEFECTS IN GE-DOPED CULTURED QUARTZ CRYSTALS
    BAHADUR, H
    INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (03) : 685 - 690
  • [9] INFRARED CHARACTERIZATION OF GE-DOPED CULTURED QUARTZ CRYSTALS
    BAHADUR, H
    PHYSICAL REVIEW B, 1994, 50 (02): : 717 - 721
  • [10] Low-temperature photoluminescence analysis of the γ-irradiation effect on the defect structure in Ge-doped CdTe single crystals
    Nasieka, Iu.
    Rashkovetskyi, L.
    Boyko, M.
    Strelchuk, V.
    Tsybrii, Z.
    Danilchenko, B.
    Shcherbak, L.
    JOURNAL OF LUMINESCENCE, 2013, 144 : 112 - 116
12345