Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor

被引:5
|
作者
Choi, June-Heang [1 ]
Park, Taehyun [2 ]
Hur, Jaehyun [2 ]
Cha, Ho-Young [1 ]
机构
[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea
[2] Gachon Univ, Dept Chem & Biol Engn, Seongnam 13120, Gyeonggi, South Korea
基金
新加坡国家研究基金会;
关键词
AlGaN; GaN; ZnO-nanoparticles; Pd; photocatalyst; hydrogen sensor; ultraviolet; GAS-SENSING PROPERTIES; HIGH-SENSITIVITY; RECENT PROGRESS; ZNO NANORODS; THIN-FILMS; NANOPARTICLES; NANOSTRUCTURES; TIO2;
D O I
10.3390/nano11061422
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An AlGaN/GaN heterostructure based hydrogen sensor was fabricated using a dual catalyst layer with ZnO-nanoparticles (NPs) atop of Pd catalyst film. The ZnO-NPs were synthesized to have an average diameter of similar to 10 nm and spin coated on the Pd catalyst layer. Unlike the conventional catalytic reaction, the fabricated sensors exhibited room temperature operation without heating owing to the photocatalytic reaction of the ZnO-NPs with ultraviolet illumination at 280 nm. A sensing response of 25% was achieved for a hydrogen concentration of 4% at room temperature with fast response and recovery times; a response time of 8 s and a recovery time of 11 s.
引用
收藏
页数:10
相关论文
共 50 条
  • [31] Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate
    Hsiao, Yu-Lin
    Wang, Yi-Jie
    Chang, Chia-Ao
    Weng, You-Chen
    Chen, Yen-Yu
    Chen, Kai-Wei
    Maa, Jer-Shen
    Chang, Edward Yi
    APPLIED PHYSICS EXPRESS, 2014, 7 (11) : 115501
  • [32] Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions
    Choi, June-Heang
    Kim, Hyungtak
    Sung, Hyuk-Kee
    Cha, Ho-Young
    SENSORS, 2019, 19 (24)
  • [33] Low-Temperature and Ammonia-Free Epitaxy of the GaN/AlGaN/GaN Heterostructure
    Tobaldi, David Maria
    Trimini, Valentina
    Creti, Arianna
    Lomascolo, Mauro
    Dicorato, Stefano
    Losurdo, Maria
    Passaseo, Adriana
    Tasco, Vittorianna
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (12) : 5451 - 5458
  • [34] Simplified Gas Sensor Model Based On AlGaN/GaN Heterostructure Schottky Diode
    Das, Subhashis
    Majumdar, S.
    Kumar, R.
    Chakraborty, A.
    Bag, A.
    Biswas, D.
    ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015), 2015, 1675
  • [35] Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption
    Choi, J. -H.
    Jo, M. -G.
    Han, S. -W.
    Kim, H.
    Kim, S. -H.
    Jang, S.
    Kim, J. -S.
    Cha, H. -Y.
    ELECTRONICS LETTERS, 2017, 53 (17) : 1200 - 1202
  • [36] Strain-free AlGaN/GaN Nanowires for UV Sensor Applications
    Ahn, Jaehui
    Kim, Jihyun
    KOREAN CHEMICAL ENGINEERING RESEARCH, 2012, 50 (01): : 72 - 75
  • [37] Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
    A. A. Andreev
    E. A. Vavilova
    I. S. Ezubchenko
    M. L. Zanaveskin
    I. O. Maiboroda
    Technical Physics, 2017, 62 : 1288 - 1291
  • [38] Influence of a Low-Temperature GaN Cap Layer on the Electron Concentration in AlGaN/GaN Heterostructure
    Andreev, A. A.
    Vavilova, E. A.
    Ezubchenko, I. S.
    Zanaveskin, M. L.
    Maiboroda, I. O.
    TECHNICAL PHYSICS, 2017, 62 (08) : 1288 - 1291
  • [39] Selective hydrogen detection of Pd/AlGaN/GaN HEMT-type sensors by temperature sweep operation
    Watanabe, Akifumi
    Nakamura, Seiji
    Okumura, Tsugunori
    2012 IEEE SENSORS PROCEEDINGS, 2012, : 773 - 776
  • [40] Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
    Khan, MA
    Chen, Q
    Yang, JW
    Shur, MS
    Dermott, BT
    Higgins, JA
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (07) : 325 - 327