Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor

被引:5
|
作者
Choi, June-Heang [1 ]
Park, Taehyun [2 ]
Hur, Jaehyun [2 ]
Cha, Ho-Young [1 ]
机构
[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea
[2] Gachon Univ, Dept Chem & Biol Engn, Seongnam 13120, Gyeonggi, South Korea
基金
新加坡国家研究基金会;
关键词
AlGaN; GaN; ZnO-nanoparticles; Pd; photocatalyst; hydrogen sensor; ultraviolet; GAS-SENSING PROPERTIES; HIGH-SENSITIVITY; RECENT PROGRESS; ZNO NANORODS; THIN-FILMS; NANOPARTICLES; NANOSTRUCTURES; TIO2;
D O I
10.3390/nano11061422
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An AlGaN/GaN heterostructure based hydrogen sensor was fabricated using a dual catalyst layer with ZnO-nanoparticles (NPs) atop of Pd catalyst film. The ZnO-NPs were synthesized to have an average diameter of similar to 10 nm and spin coated on the Pd catalyst layer. Unlike the conventional catalytic reaction, the fabricated sensors exhibited room temperature operation without heating owing to the photocatalytic reaction of the ZnO-NPs with ultraviolet illumination at 280 nm. A sensing response of 25% was achieved for a hydrogen concentration of 4% at room temperature with fast response and recovery times; a response time of 8 s and a recovery time of 11 s.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] AlGaN/GaN Heterostructure Based Hydrogen Sensor with Temperature Compensation
    Baik, Kwang Hyeon
    Jang, Soohwan
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (04)
  • [2] A room temperature HEMT process for AlGaN/GaN heterostructure characterization
    Fagerlind, M.
    Zirath, H.
    Rorsman, N.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)
  • [3] Pd/AlGaN/GaN HEMT-Based Room Temperature Hydrogen Gas Sensor
    Pandey, Vikas
    Kumar, Amit
    Razeen, Ahmed S.
    Gupta, Ankur
    Tripathy, Sudhiranjan
    Kumar, Mahesh
    IEEE SENSORS JOURNAL, 2024, 24 (24) : 40409 - 40416
  • [4] Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET
    Valizadeh, P
    Alekseev, E
    Pavlidis, D
    Yun, F
    Morkoç, H
    SOLID-STATE ELECTRONICS, 2006, 50 (02) : 282 - 286
  • [5] MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor
    Sharma, Nipun
    Kumar, Sumit
    Gupta, Ankur
    Bin Dolmanan, Surani
    Patil, Dharmraj Subhash Kotekar
    Tan, Swee Tiam
    Tripathy, Sudhiranjan
    Kumar, Mahesh
    SENSORS AND ACTUATORS A-PHYSICAL, 2022, 342
  • [6] Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure
    Niigata, Kazutaka
    Narano, Kazuhiro
    Maeda, Yutaro
    Ao, Jin-Ping
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (11)
  • [7] APTES functionalized AlGaN/GaN HEMT for carbon dioxide sensing at room temperature
    Xu, Linxin
    Zhang, Heqiu
    Wu, Yihang
    Xia, Xiaochuan
    Gu, Haiyan
    Zhu, Jiang
    Huang, Huishi
    Guo, Wenping
    Liang, Hongwei
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (19)
  • [8] Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure
    D.J. Chen
    B. Shen
    X.L. Wu
    J.C. Shen
    F.J. Xu
    K.X. Zhang
    R. Zhang
    R.L. Jiang
    Y. Shi
    Y.D. Zheng
    Applied Physics A, 2005, 80 : 1729 - 1731
  • [9] Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure
    Chen, DJ
    Shen, B
    Wu, XL
    Shen, JC
    Xu, FJ
    Zhang, KX
    Zhang, R
    Jiang, RL
    Shi, Y
    Zheng, YD
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (08): : 1729 - 1731
  • [10] TiO2 functionalized AlGaN/GaN HEMT gas sensor based on capacitance change strategy under room temperature
    Liu, Litao
    Zhang, Heqiu
    Xu, Ruiliang
    Zhang, Wenhui
    Xia, Xiaochuan
    Hua, Ruinian
    Zhang, Kexiong
    Huang, Huishi
    Xu, Nanfa
    Liang, Hongwei
    MATERIALS RESEARCH BULLETIN, 2023, 162