Infrared studies of silicon carbide.

被引:0
|
作者
Speck, AK
Hofmeister, AM
机构
[1] Univ Illinois, Dept Astron, Urbana, IL 61801 USA
[2] Washington Univ, Dept Earth & Planetary Sci, St Louis, MO 63130 USA
关键词
D O I
暂无
中图分类号
P3 [地球物理学]; P59 [地球化学];
学科分类号
0708 ; 070902 ;
摘要
引用
收藏
页码:A150 / A150
页数:1
相关论文
共 50 条
  • [21] DEOXIDATION OF STEEL MELTS WITH METALLURGICAL SILICON CARBIDE.
    Benecke, Theodor
    Defays, Jacques
    Palmaers, Alain
    MPT. Metallurgical plant and technology, 1981, 4 (05): : 34 - 37
  • [22] SHORT-WAVELENGTH PHOTOCONDUCTIVITY OF SILICON CARBIDE.
    Ballandovich, V.S.
    Violina, G.N.
    1977, 11 (07): : 725 - 727
  • [23] Studies on the reduction forces of calcium carbide.
    von Kugelgen, F
    ZEITSCHRIFT FUR ELEKTROCHEMIE, 1901, 7 : 0573 - 0580
  • [24] HIGH STRENGTH & MODULUS FILAMENTS OF BORON & SILICON CARBIDE.
    Buck, M.E.
    1600, (08):
  • [25] THERMODYNAMIC CALCULATIONS FOR THE CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE.
    Kingon, Angus I.
    Lutz, Leonard J.
    Davis, Robert F.
    Liaw, P.
    1600, (66):
  • [26] CORRELATED MOLYBDENUM AND RUTHENIUM ISOTOPES IN PRESOLAR SILICON CARBIDE.
    Stephan, T.
    Bloom, H. E.
    Davis, A. M.
    Hoppe, P.
    Korsmeyer, J. M.
    Pellin, M. J.
    Regula, A.
    Sheu, S.
    METEORITICS & PLANETARY SCIENCE, 2021, 56
  • [27] Effect of surface stoichiometry on nucleation and growth of silicon carbide.
    Konstantinov, AO
    Hallin, C
    Kordina, O
    Janzen, E
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 249 - 252
  • [28] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SCANDIUM-DOPED SILICON CARBIDE.
    Seleznev, B.I.
    Tairov, Yu.M.
    Khlebnikov, I.I.
    Tsvetkov, V.F.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (05): : 682 - 683
  • [29] THERMAL S-N SWITCHING IN SILICON CARBIDE.
    Levinshtein, M.E.
    Radovanova, E.I.
    1978, 12 (06): : 665 - 669
  • [30] DIFFUSION OF BORON IN p-TYPE SILICON CARBIDE.
    Mokhov, E.N.
    Goncharov, E.E.
    Ryabova, G.G.
    Soviet physics. Semiconductors, 1984, 18 (01): : 27 - 30