Modeling of low-energy ion implantation process by molecular dynamics (MD) approach

In this paper, we report a molecular dynamics (MD) simulation of ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, molecular dynamics with a recoil ion approximation is employed while the Kinetic Monte Carlo (KMC) diffusion model is used for the dynamic annealing between cascades. The calculation is performed for B with energies down to 100 eV and dose 1 x 10(14) ions/cm(2). The B and As implant is simulated with energies of 0.5, 1, 2, 4, 8, and 16 keV and with dose of 1 X 1014 ions/cm2 into Si <100>, respectively. Then, we consider the experimental data for 13 implant with energy of 2 keV, doses of 1 x 10(14) ions/cm(2) and 1 x 10(15) ions/cm(2), and dose rate of 1 x 10(12) ions/cm(2)sec, both with and without taking dynamic annealing into account.