Self-recovery function of p(1x1)-Sc-O/W(100) system used as Schottky emitter

The effects of heating temperature for the preparation of an Sc-O/W(100) surface were investigated. Surface properties of the Sc-O/W(100) surface prepared by heating at 1600 and 1700 K were significantly different from those prepared at 1500 K, which is the operating temperature of the Sc-O/W(100) emitter. By heating at similar to1700 K the p(1 x 1) structure formed by Sc-O complexes was confirmed, whereas the p(2 x 1)-p(1 x 2) double-domain structure was obtained by heating at similar to1500K. The surface properties prepared by heating at 1700 K were found to be very stable, and the surface has a self-recovery function against residual gas ion sputtering at the operating temperature of the emitter. The present results strongly suggested that pretreatment of the Sc-O/W(100) emitter by heating at 1700 K and device operation at similar to1500 K result in high reproducibility of the superior electron emission property of the Sc-O/W(100) emitter. Copyright (C) 2005 John Wiley Sons, Ltd.