Self-recovery function of p(1x1)-Sc-O/W(100) system used as Schottky emitter

被引:7
|
作者
Lida, S [1 ]
Nagatomi, T [1 ]
Takai, Y [1 ]
机构
[1] Osaka Univ, Grad Sch Engn, Dept Mat & Life Sci, Suita, Osaka 5650871, Japan
关键词
Auger electron spectroscopy; low-energy electron diffraction; surface segregation; scandium; oxygen; tungsten; Schottky emitter;
D O I
10.1002/sia.1942
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effects of heating temperature for the preparation of an Sc-O/W(100) surface were investigated. Surface properties of the Sc-O/W(100) surface prepared by heating at 1600 and 1700 K were significantly different from those prepared at 1500 K, which is the operating temperature of the Sc-O/W(100) emitter. By heating at similar to1700 K the p(1 x 1) structure formed by Sc-O complexes was confirmed, whereas the p(2 x 1)-p(1 x 2) double-domain structure was obtained by heating at similar to1500K. The surface properties prepared by heating at 1700 K were found to be very stable, and the surface has a self-recovery function against residual gas ion sputtering at the operating temperature of the emitter. The present results strongly suggested that pretreatment of the Sc-O/W(100) emitter by heating at 1700 K and device operation at similar to1500 K result in high reproducibility of the superior electron emission property of the Sc-O/W(100) emitter. Copyright (C) 2005 John Wiley Sons, Ltd.
引用
收藏
页码:106 / 109
页数:4
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