Controlling spontaneous emission from quantum dots using photonic crystal microcavities

被引：2

作者：

Gevaux, D. G. ^{[1
]}

Atkinson, P. ^{[2
]}

Anderson, D. ^{[2
]}

Bennett, A. J. ^{[1
]}

Bremner, S. P. ^{[2
]}

Griffiths, J. ^{[1
,2
]}

Ellis, D. J. P. ^{[1
,2
]}

Stevenson, R. M. ^{[1
]}

Jones, G. A. C. ^{[2
]}

Ritchie, D. A. ^{[2
]}

Shields, A. J. ^{[1
]}

机构：

[1] Toshiba Res Europe Ltd, Cambridge Res Lab, 260 Sci Pk,Milton Rd, Cambridge CB4 0WE, England

[2] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期

关键词：

D O I：

10.1002/pssc.200671514

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Controlling the radiative lifetime of quantum dot excitons by using microcavities provides a means of improving the performance of single photon sources. By manipulating the density of optical states in the environment of the quantum dot, the rate of spontaneous recombination can be altered by the Purcell effect. The emitted light can also be concentrated into a smaller extraction cone, improving efficiency. We investigate the use of temperature to spectrally tune an InAs self-assembled quantum dot exciton and the mode of a photonic crystal defect cavity. A Purcell enhancement of the spontaneous emission rate of up to a factor of 11.4 is seen on-resonance, while suppression by up to a factor of 4.4 is seen off-resonance. Also, a two orders of magnitude increase in the intensity of light detected is measured when compared to quantum dots in bulk GaAs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3676 / +

页数：2

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