Crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition

被引：19
|
作者：
Farjas, J
Rath, C
Roura, P
Cabarrocas, PR
机构：
[1] Univ Girona, Dept Fis, GRMT, E-17071 Girona, Catalonia, Spain
[2] Ecole Polytech, CNRS, LPICM, UMR 7647, F-91128 Palaiseau, France
来源：
APPLIED SURFACE SCIENCE | 2004年 / 238卷 / 1-4期
关键词：
crystallization kinetics; amorphous silicon; DSC;
D O I：
10.1016/j.apsusc.2004.05.200
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition is studied by differential scanning and isothermal calorimetry in a wide temperature range varying from 600 to 720 degreesC. The reported kinetics is found to correspond to three-dimensional growth. The kinetic parameters obtained are in good agreement with those already published on thin films. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：165 / 168
页数：4
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