Low chirp and high speed complex coupled DFB-LD with semi-insulating InGaAs grating

被引:0
|
作者
Park, C [1 ]
Oh, DK [1 ]
Kim, JS [1 ]
Kim, HM [1 ]
机构
[1] Myongji Univ, Dept Elect Engn, Yongin 449728, South Korea
关键词
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, we shows a novel application of semi-insulating InGaAs to a complex coupled DFB-LD. Its superior performances such as high optical efficiency, high modulation bandwidth and low chirping, are described.
引用
收藏
页码:29 / 33
页数:5
相关论文
共 50 条
  • [21] 1.53-MU-M DFB LASER ON SEMI-INSULATING INP SUBSTRATE WITH VERY LOW THRESHOLD CURRENT
    THULKE, W
    ILLEK, S
    ELECTRONICS LETTERS, 1990, 26 (13) : 933 - 934
  • [22] High resonance frequency in a coupled cavity DFB-LD with phase-shifted/uniform gratings by photon-photon resonance
    Numai, Takahiro
    OPTIK, 2020, 202
  • [23] Enhanced high-speed photoresponse by diffusion of iron into undoped semi-insulating GaAs
    Ohsawa, J
    Ozaki, Y
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 159 - 162
  • [24] High Resonance Frequency in a Coupled Cavity DFB-LD with Phase-Shifted/Uniform Gratings by Photon-Photon Resonance
    Numai, Takahiro
    17TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES NUSOD 2017, 2017, : 35 - 36
  • [25] NEW LASER STRUCTURE ON SEMI-INSULATING SUBSTRATE, GROWN BY MOCVD, FOR HIGH-SPEED OPERATION
    BLONDEAU, R
    RONDI, D
    KRAKOWSKI, M
    GLASTRE, G
    VILAIN, G
    ELECTRONICS LETTERS, 1990, 26 (07) : 458 - 459
  • [26] Carrier lifetime under low and high electric field conditions in semi-insulating GaAs
    Rogalla, M
    Geppert, R
    Goppert, R
    Hornung, M
    Ludwig, J
    Schmid, T
    Irsigler, R
    Runge, K
    Soldner-Rembold, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 410 (01): : 74 - 78
  • [27] Carrier lifetime under low and high electric field conditions in semi-insulating GaAs
    Rogalla, M.
    Geppert, R.
    Goeppert, R.
    Hornung, M.
    Ludwig, J.
    Schmid, Th.
    Irsigler, R.
    Runge, K.
    Soeldner-Rembold, A.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998, 410 (01): : 74 - 78
  • [28] Very-low-threshold, highly efficient, and low-chirp 1.55-mu m complex-coupled DFB lasers with a current-blocking grating
    Chuang, ZM
    Wang, CY
    Lin, W
    Liao, HH
    Su, JY
    Tu, YK
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (11) : 1438 - 1440
  • [29] Zn-Diffusion InAs Photodiodes on a Semi-Insulating GaAs Substrate for High-Speed and Low Dark-Current Performance
    Shi, J. -W.
    Kuo, F. -M.
    Huang, B. -R.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (02) : 100 - 102
  • [30] Low chirp and high-speed operation of transverse coupled cavity VCSEL
    Hu, Shanting
    Ahmed, Moustafa
    Bakry, Ahmed
    Koyama, Fumio
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (09)