The Effect of Molar Fraction of the Intrinsic Layer on the PIN Structure for Solar Cell Based an Indium Gallium Nitride Using AMPS-1D

In this work, we studied the influence of the mole fraction x of the intrinsic layer in a PIN structure on the efficiency of a homo-junction cell based on InGaN. First, we studied the performance of a solar cell based on a PN junction, which we took as a reference. In this work we have chosen a gap E-g = 1.4 eV, which is considered as the best absorption gap of the solar spectrum that gives an efficiency of 27.46%. Second, we introduced an intrinsic layer between the P and N layers to form a PIN solar cell to improve performance compared to the PN cell. The improvement of the efficiency of 10.42% of the PIN cell compared to the PN cell. While studying the influence of the molar fraction x and the thickness of the intrinsic layer on the performances of the cell, it gave us 37.88%.