Terahertz switching action of a double-barrier resonant tunneling device

被引：15

作者：

Orellana, P

Claro, F

Anda, E

机构：

[1] Univ Catolica Norte, Dept Fis, Antofagasta, Chile

[2] Pontificia Univ Catolica Chile, Fac Fis, Santiago 22, Chile

[3] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, Rio De Janeiro, Brazil

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.62.9959

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The response of an asymmetric double barrier resonant device to the passage of terahertz radiation is discussed. Within the bistable region the radiation is able to turn the current flowing through the system on or off, with an onset that depends on the bias, the strength of the incoming radiation, and its frequency.

引用

页码：9959 / 9961

页数：3

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