Effects of Si and C doping on the superconducting properties of mgb2

被引：0

作者：

Zhou, SH ^{[1
]}

Pan, AV ^{[1
]}

Qin, MJ ^{[1
]}

Wang, XL ^{[1
]}

Liu, HK ^{[1
]}

Dou, SX ^{[1
]}

机构：

[1] Univ Wollongong, Inst Supercond & Elect Mat, Wollongong, NSW 2522, Australia

来源：

ADVANCES IN CRYOGENIC ENGINEERING, VOLS 50A AND B | 2004年 / 711卷

关键词：

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

C and Si powders of different sizes were doped into MgB2 separately or together. Samples were made by a solid-state reaction method. It was found that the C doping had a strong negative effect on critical temperature (T,) while the Si doping did not significantly depress T-c. All of these doping materials increased J(c) at higher fields when the doping particles were of nanometer sizes. At 20 K and 4 T, J(c) of the sample doped with nano-Si achieved 10(4) A/cm(2), which is 2 orders of magnitude higher than that of coarse Si doped MgB2. J(c) of the sample doped with nano-carbon is one order of magnitude higher than for the sample doped with coarse carbon particles.

引用

页码：554 / 560

页数：7

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