GaN/AlN electro-optical modulator prototype at telecommunication wavelengths

被引：1

作者：

Baumann, E. ^{[1
]}

Giorgetta, F. R. ^{[1
]}

Hofstetter, D. ^{[1
,2
]}

GUillot, F. ^{[2
]}

Leconte, S. ^{[2
]}

Bellet-AmalriC, E. ^{[2
]}

Monroy, E. ^{[2
]}

机构：

[1] Univ Neuchatel, AL Breguet 1, CH-2000 Neuchatel, Switzerland

[2] CEA CNRS UJF, DRFMC SP2M PSC, Nanophy Semicond, Grenoble 38054, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期

基金：

瑞士国家科学基金会;

关键词：

D O I：

10.1002/pssc.200674276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a prototype electro-optical modulator at telecommunication wavelength based on intersubband (ISB) transitions in a short-period GaN/AIN superlattice (SL). The device has a vertical architecture resembling a nitride-based high-electron mobility transistor. whose barrier layer has been replaced by a 5 period SL. By applying an electrical field, we were able to influence the bandstructure and as a consequence to quench the ISB absorption peak originating from the SL. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1621 / +

页数：2

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