GaN/AlN electro-optical modulator prototype at telecommunication wavelengths

被引：1
|
作者：
Baumann, E. [1 ]
Giorgetta, F. R. [1 ]
Hofstetter, D. [1 ,2 ]
GUillot, F. [2 ]
Leconte, S. [2 ]
Bellet-AmalriC, E. [2 ]
Monroy, E. [2 ]
机构：
[1] Univ Neuchatel, AL Breguet 1, CH-2000 Neuchatel, Switzerland
[2] CEA CNRS UJF, DRFMC SP2M PSC, Nanophy Semicond, Grenoble 38054, France
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
基金：
瑞士国家科学基金会;
关键词：
D O I：
10.1002/pssc.200674276
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on a prototype electro-optical modulator at telecommunication wavelength based on intersubband (ISB) transitions in a short-period GaN/AIN superlattice (SL). The device has a vertical architecture resembling a nitride-based high-electron mobility transistor. whose barrier layer has been replaced by a 5 period SL. By applying an electrical field, we were able to influence the bandstructure and as a consequence to quench the ISB absorption peak originating from the SL. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1621 / +
页数：2
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