Microwave plasma-enhanced CVD for high rate coatings of silicon oxide

被引：0

作者：

Takai, O ^{[1
]}

Honjo, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

TRANSACTIONS OF THE INSTITUTE OF METAL FINISHING | 1998年 / 76卷

关键词：

D O I：

10.1080/00202967.1998.11871184

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Microwave plasma-enhanced CVD has been studied for the high rate coatings of silicon oxide using methyltrimethoxysilane, an organosilicon compound, and oxygen as gas sources. The transparent hard films could be deposited onto substrates at the high rare of about 1 mu m/min. The composition of the films prepared at pressures below 100 Pa was similar to silicon dioxide. Analyses of the films were carried out by using XRD, FT-IR, XPS and AES.

引用

页码：16 / 18

页数：3

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