Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

被引：0
|
作者：
Ru, GP [1 ]
Qu, XP
Zhu, SY
Li, BZ
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Donaton, RA
Maex, K
机构：
[1] Fudan Univ, Dept Elect Engn, Shanghai 200433, Peoples R China
[2] State Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
[3] IMEC, B-3001 Louvain, Belgium
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 04期
关键词：
D O I：
10.1116/1.1305269
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ballistic electron emission microscopy has been used to study physical damage effects on PtSi/n-Si Schottky contacts. The physical damages are introduced into Si substrates by ion bombardment with well-defined energies in an ion-milling process. Schottky barrier height (SBH) distribution is measured on the subsequently formed PtSi/n-Si Schottky diodes. The results show that mean SBH decreases with ion energy in a square-root relation. A simple SBH model is developed to consider image-force lowering effect for a semiconductor with a step-function distribution of donor concentration. The model is successfully used to explain quantitatively the experimental relation between SBH and ion energy. (C) 2000 American Vacuum Society. [S0734-211X(00)02804-3].
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收藏
页码：1942 / 1948
页数：7
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