SIMULATION OF DISPLACEMENT DAMAGE CROSS SECTION OF CUPROUS OXIDE/ZINC OXIDE (Cu2O/ZnO) BASED HETEROJUNCTION DEVICE

In space, semiconductor devices are vulnerable to the various effect of a high energy level of radiation, causing Single Event Upsets (SEU), damaging or altering the lattice structure of the semiconductor device. The effect of energy level exposure and angle of trajectory on semiconductor device had received very little attention. In this research, the simulated sample is cuprous oxide/zinc oxide (Cu2O/ZnO) based Heterojunction Device. The device was initially characterized using the General-Purpose Photovoltaic Device Model (GPVDM) simulation to obtain the current-voltage (IV) and current density-voltage (JV). The radiation damage was then modelled using cascade simulation on the effect of elastic and inelastic scattering by Cobalt-60 (Co-60) ions using Stopping and Range of Ions in Matter (SRIM-TRIM) simulation. GPVDM simulation shows, the recombination rate of hole and electrons at V-oc is obtained to be 3.985e(-35) m(-3)s(-1). SRIM-TRIM simulation shows that at 1.5 MeV particle radiation energy, it was found that the stopping range is about 1.07 mu m and at a maximum energy of 10 MeV, the stopping range is about 4.08 mu m. At E-Co = 1500 keV, E-Co = 5000 kev and E-Co = 10000 keV, the total ionization is 1173.8 keV/Ion 4267 keV/Ion and 9550.8 keV/Ion at an ion angle trajectory of 60 degrees. This paper highlights the roles of energy of the Primary Knock-on Atom (PKA) and the response of device to ion collision cascade at different irradiation angle.