Electrical Stability of Hexagonal a-Si:H TFTs

被引：1
|
作者：
Yoo, Geonwook [1 ]
Lee, Hojin [1 ]
Kanicki, Jerzy [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 01期
关键词：
Amorphous silicon; current-temperature stress (CTS); hexagonal thin-film transistor (HEX TFT); parallel-connected transistors; threshold voltage (V(th)); THIN-FILM TRANSISTORS; FLAT-PANEL DISPLAYS; DEPENDENCE;
D O I：
10.1109/LED.2009.2034760
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we study the current-temperature-stress-induced electrical instability of single and multiple hexagonal (HEX) hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) connected in parallel. The influence of the threshold voltage shift of a single HEX TFT on the overall electrical performance of multiple HEX TFTs is discussed. The results indicate that a-Si:H HEX TFTs have an improved electrical stability and a threshold voltage shift linear dependence on a number of connected HEX-TFT units.
引用
收藏
页码：53 / 55
页数：3
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