Compensation of the Pulse-to-Pulse Instability of GaN HEMT-Based Power Amplifiers

被引：5
|
作者：
Tome, Pedro M. [1 ]
Barradas, Filipe M.
Cunha, Telmo R.
Pedro, Jose C.
机构：
[1] Inst Telecomunicacoes, Aveiro, Portugal
来源：
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年
关键词：
electron trapping; GaN high-electron-mobility transistor (HEMT); pulsed radar; pulse-to-pulse stability;
D O I：
10.1109/mwsym.2019.8700957
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we describe a method for compensating the pulse-to-pulse instability of GaN high-electron-mobility transistor (HEMT)-based power amplifiers (PAs) caused by electron-trapping effects. The method consists in generating a compensation signal based on measured data and using it to offset the dynamic threshold voltage modulation caused by the charge and discharge of the HEMT's traps. This method was verified with a pulsed radar waveform for moving target indication on a 15 W GaN HEMT-based PA, achieving an improvement of the peak output power of 0.85 dB and an improvement of the pulse-to-pulse amplitude stability of over 20 dB.
引用
收藏
页码：408 / 411
页数：4
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