Surface chemistry of five-membered aromatic ring molecules containing two different heteroatoms on Si(111)-7x7

被引:23
|
作者
Tao, Feng [1 ]
Bernasek, Steven L. [1 ]
机构
[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
关键词
D O I
10.1021/ja070182y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The surface chemistry of three representative aromatic molecules containing two different heteroatoms isoxazole, oxazole, and thiazole on Si(111)-7 x 7 was studied. These molecules exhibit different competition and selectivity for multiple reaction channels with this surface, determined by a combination of molecular electronic and structural factors. Isoxazole is chemically attached to Si(111)-7 x 7 through both dative-bond addition and [4 + 2]-like cycloaddition. Oxazole chemisorbs on Si(111)-7 x 7 through both dative-bond addition and [2 + 2]-like cycloaddition. The kinetically favored [2 + 2]-like cycloadduct at low temperature is thermally converted into the thermodynamically preferred [4 + 2]-like cycloadduct at a temperature higher than 300 K. Thiazole is chemically bound to this surface only through formation of a Si center dot center dot center dot N dative bond at low temperature. This dative-bonded molecule is thermally converted into a [4 + 2]-like cycloadduct. The reaction channels of the three five-membered aromatic molecules containing two different heteroatoms (isoxazole, oxazole, and thiazole) and of the aromatic molecules containing only one heteroatom (pyridine, pyrrole, furan, and thiophene) are compared and analyzed for a thorough understanding of the reaction mechanisms of various heterocyclic aromatic molecules on this surface. The intrinsic connection between surface reaction mechanism and molecular electronic structure is demonstrated. This includes the distribution of electron density on the molecular ring determined by the geometric arrangement of the heteroatoms, the electronegativity of the heteroatoms, and the electronic contribution of the heteroatoms to formation of aromatic pi conjugation, as well as the molecular polarity.
引用
收藏
页码:4815 / 4823
页数:9
相关论文
共 50 条
  • [21] GEOMETRICAL STRUCTURES OF THE GE/SI(111) INTERFACE AND THE SI(111) (7X7) SURFACE
    DEV, BN
    MATERLIK, G
    GREY, F
    JOHNSON, RL
    CLAUSNITZER, M
    PHYSICAL REVIEW LETTERS, 1986, 57 (24) : 3058 - 3061
  • [22] DIFFRACTION OF HE ATOMS AT A SI(111) 7X7 SURFACE
    CARDILLO, MJ
    BECKER, GE
    PHYSICAL REVIEW LETTERS, 1979, 42 (08) : 508 - 511
  • [23] QUESTIONS ABOUT THE SI(111)-(7X7) RECONSTRUCTED SURFACE
    OHDOMARI, I
    SURFACE SCIENCE, 1990, 227 (03) : L125 - L129
  • [24] CLUSTER FORMATION OF LI ON THE SI(111)7X7 SURFACE
    HASEGAWA, Y
    KAMIYA, I
    HASHIZUME, T
    SAKURAI, T
    TOCHIHARA, H
    KUBOTA, M
    MURATA, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 238 - 240
  • [25] Cycloaddition chemistry of thiophene on the silicon (111)-7x7 surface
    Cao, Y
    Yong, KS
    Wang, ZH
    Deng, JF
    Lai, YH
    Xu, GQ
    JOURNAL OF CHEMICAL PHYSICS, 2001, 115 (07): : 3287 - 3296
  • [26] EVALUATION OF RECENT SI(111)-(7X7)SURFACE MODELS
    MILLER, DJ
    HANEMAN, D
    SURFACE SCIENCE, 1981, 104 (2-3) : L237 - L244
  • [27] Adatom potential relief on Si(111)-7x7 surface
    Vershinin, AV
    Zverev, AV
    Shwartz, NL
    Yanovitskaja, ZS
    2004 INTERNATIONAL SIBERIAN WORKSHOPS AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, EDM 2004, PROCEEDINGS, 2004, : 62 - 65
  • [28] THE STABILITY OF STRUCTURE MODELS OF SI(111)7X7 SURFACE
    LIU, HZ
    LI, ZY
    CHINESE PHYSICS, 1990, 10 (03): : 632 - 641
  • [29] Local cleavage of the Si(111)7x7 surface by STM
    Pascual, JI
    Rogero, C
    Gómez-Herrero, J
    Baró, AM
    PHYSICAL REVIEW B, 1999, 59 (15): : 9768 - 9770
  • [30] STUDY OF NIOBIUM INTERACTION WITH THE SI(111)7X7 SURFACE
    OUSTRY, A
    BERTY, J
    CAUMONT, M
    DAVID, MJ
    JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1989, 14 (06): : 427 - 436