CT;
MT;
MCT;
film;
microwave;
dielectric constants;
dielectric loss;
temperature coefficient of dielectric constant;
D O I:
10.1016/j.ceramint.2004.04.001
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The microwave dielectric properties of CaTiO3 (CT), MgTiO3 (MT) and (Mg0.93Ca0.07)TiO3 (MCT) thin films prepared by the metalorganic solution deposition technique were investigated. The well-crystallized CT, NIT and MCT thin films were annealed at 800degreesC. The microwave dielectric properties of the thin films were measured using a circular-patch capacitor geometry with a network analyzer. The dielectric constant (K), dielectric loss (tan delta) and temperature coefficient of dielectric constant (TCK) of CT films measured up to 6 GHz were 160 +/- 3, 0.003 +/- 0.0003 and - 1340 ppm/degreesC, respectively. In contrast, the MT films showed K similar to 16 +/- 1, tan delta similar to 0.0008 +/- 0.0001 and TCK similar to +260 ppm/degreesC. MCT films exhibited microwave dielectric properties of K similar to 22 +/- 1, tan delta - 0.0012 +/- 0002 and TCK similar to +10 ppm/degreesC. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.
机构:
Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
CEA, LETI, MINATEC, F-38054 Grenoble, FranceSichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
Zhu, X. H.
Defay, E.
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机构:
CEA, LETI, MINATEC, F-38054 Grenoble, FranceSichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
Defay, E.
Suhm, A.
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机构:
CEA, LETI, MINATEC, F-38054 Grenoble, FranceSichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
Suhm, A.
Fribourg-Blanc, E.
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机构:
CEA, LETI, MINATEC, F-38054 Grenoble, FranceSichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
Fribourg-Blanc, E.
Aid, M.
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机构:
CEA, LETI, MINATEC, F-38054 Grenoble, FranceSichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
Aid, M.
Zhu, J. L.
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机构:
Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R ChinaSichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
Zhu, J. L.
Xiao, D. Q.
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机构:
Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R ChinaSichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
Xiao, D. Q.
Zhu, J. G.
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机构:
Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R ChinaSichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
机构:
IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Shaw, TM
Suo, Z
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Suo, Z
Huang, M
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Huang, M
Liniger, E
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Liniger, E
Laibowitz, RB
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Laibowitz, RB
Baniecki, JD
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA