Physical and dielectric properties of sol-gel derived ZnO-doped Zr0.8Sn0.2TiO4 dielectric thin films

被引：4

作者：

Hsu, Cheng-Hsing ^{[1
]}

Chung, Ching-Yi ^{[1
]}

机构：

[1] Natl United Univ, Dept Elect Engn, Kung Ching Li 36003, Miao Li, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 491卷 / 1-2期

关键词：

Dielectric properties; Sol-gel method; ZnO-doped Zr0.8Sn0.2TiO4 thin film; ELECTRICAL-PROPERTIES; RESONATOR MATERIALS; MICROSTRUCTURE; TEMPERATURE; (ZR; SN)TIO4; DEPOSITION;

D O I：

10.1016/j.jallcom.2009.10.238

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrical properties, optical properties and microstructures of 1 wt% ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by the sol-gel method on ITO substrates at different heat-treatment temperatures have been investigated. All films exhibited ZST (111) and (101) orientations perpendicular to the substrate surface and the grain size increased with increasing heat-treatment temperature. Optical transmittance spectroscopy further revealed high transparency (over 80%) in the visible region of the spectrum. At a heat-treatment temperature level of 250 degrees C, the ZnO-doped (Zr0.8Sn0.2)TiO4 films were found to possess a dielectric constant of 18 (at 1 MHz), a dissipation factor of 0.24 (at 1 MHz) and a leakage current density of 8.7 x 10(-9) A/cm(2) at an electrical field of 50 V/cm. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：483 / 486

页数：4

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