Fast transimpedance switching burst-mode CMOS optical receiver

被引:2
|
作者
Schneider, Kerstin [1 ]
Zimmermann, Horst [1 ]
机构
[1] Vienna Univ Technol, Inst Elect Measurement & Circuit Design, A-1040 Vienna, Austria
关键词
optical receiver; burst-mode receiver; deep-sub-micron CMOS technology; low-noise amplifier;
D O I
10.1002/cta.414
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work shows that the performance of optical receivers designed in silicon deep-sub-micron CMOS technologies competes successfully with more expensive SiGe-BiCMOS receivers in data rate and sensitivity. In burst-mode applications of passive optical networks, the transimpedance of the low-noise amplifier has to be switched very fast requiring, the exclusion of oscillations. To meet the burst-mode requirements, our design for 2.5 G bit/s in 120 nm CMOS offers a fast switching of the transimpedance within 3 ns and proves a low-distortion signal detection. Copyright (C) 2007 John Wiley & Sons, Ltd.
引用
收藏
页码:355 / 370
页数:16
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