Effect of Ge Profiles on the Performance of Lateral SiGe Heterojunction Bipolar Transistors with Substrate Bias

被引：1

作者：

Jin, Dongyue ^{[1
]}

Wu, Ling ^{[1
]}

Zhang, Wanrong ^{[1
]}

Guo, Bin ^{[1
]}

Yang, Shaomeng ^{[1
]}

Sun, Sheng ^{[1
]}

机构：

[1] Beijing Univ Technol, Beijing 100124, Peoples R China

来源：

SIXTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATIONS | 2020年 / 11455卷

关键词：

Ge Profiles; Lateral SiGe Heterojunction Bipolar Transistors; Substrate Bias;

D O I：

10.1117/12.2561863

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the paper, the effect of Ge profiles on the performance of lateral SiGe heterojunction bipolar transistor (LHBT) on silicon-on-insulator (SOT) substrate with positive bias voltage has been studied. With the aid of substrate bias (V-S), the peak current gain (beta) of LHBT with trapezoidal Ge profile is obviously enhanced, which is almost as same as LHBT with uniform Ge profile. At the same time, the beta of LHBT with trapezoidal Ge profile is kept as temperature increases. However, the beta of LHBT with uniform Ge profile is decreased as temperature increases. Furthermore, for LHBT with trapezoidal Ge profile, the peak junction temperature is lowered by 20.51K and the cut-off frequency (f(T)) is also improved by 158.4 GHz when compared with that of the uniform one. The results show that LHBTs with trapezoidal Ge profile could achieve the superior electrical, thermal, and high frequency performance at the same time, which provides useful guidelines to design SiGe HBTs for microwave and digital or mixed-signal applications.

引用

页数：6

共 50 条

[41] SiGe-on-Insulator Symmetric Lateral Bipolar Transistors
Yau, J. -B.
Cai, J.
Yoon, J.
D'emic, C.
Chan, K. K.
Ning, T. H.
Engelmann, S. U.
Park, D. -G.
Mo, R. T.
2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2015,
[42] SIGE-BASE, POLYEMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS
PATTON, GL
HARAME, DL
STORK, JMC
MEYERSON, BS
SCILLA, GJ
GANIN, E
1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 95 - 96
[43] Prospects for 200 GHz on silicon with SiGe heterojunction bipolar transistors
Gruhle, A
PROCEEDINGS OF THE 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2001, : 19 - 25
[44] Empirical global modelling of Si/SiGe heterojunction bipolar transistors
Taher, H.
IET MICROWAVES ANTENNAS & PROPAGATION, 2008, 2 (04) : 401 - 408
[45] SiGe heterojunction bipolar transistors with 156 GHz transit frequency
Gruhle, A
Kibbel, H
Schurr, A
Behammer, D
König, U
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXI), 1999, 99 (17): : 198 - 200
[46] Growth of high frequency SiGe heterojunction bipolar transistors structures
Radamson, HH
Mohadjeri, B
Menon, C
Bentzen, A
Grahn, J
Landgren, G
PHYSICA SCRIPTA, 2002, T101 : 45 - 48
[47] Random telegraph signal noise in SiGe heterojunction bipolar transistors
von Haartman, M
Sandén, M
Ostling, M
Bosman, G
JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4414 - 4421
[48] Ge-on-Insulator Lateral Bipolar Transistors
Yau, J. -B.
Yoon, J.
Cai, J.
Ning, T. H.
Chan, K. K.
Engelmann, S. U.
Park, D. -G.
Mo, R. T.
Shahidi, G.
2016 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2016, : 130 - 133
[49] GE-GAAS HETEROJUNCTION FOR BIPOLAR-TRANSISTORS
ITOH, T
ISHIZUKA, F
SUGIOKA, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C220 - C220
[50] Long-Term Reliability of High-Performance SiGe:C Heterojunction Bipolar Transistors
Fischer, G. G.
Micusik, D.
Pocej, A.
2012 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2012,

← 1 2 3 4 5 →