Large dielectric constant and Maxwell-Wagner relaxation in Bi2/3Cu3Ti4O12 -: art. no. 144106

被引:476
|
作者
Liu, JJ [1 ]
Duan, CG
Yin, WG
Mei, WN
Smith, RW
Hardy, JR
机构
[1] Univ Nebraska, Dept Phys, Omaha, NE 68182 USA
[2] Univ Nebraska, Dept Phys, Lincoln, NE 68588 USA
[3] Univ Nebraska, Ctr Electroopt, Lincoln, NE 68588 USA
[4] Univ Nebraska, Dept Chem, Omaha, NE 68182 USA
关键词
D O I
10.1103/PhysRevB.70.144106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied frequency and temperature dependences of impedance, electric modulus, and dielectric permittivity of Bi2/3Cu3Ti4O12 in the ranges of 10(-1)-10(6) Hz and -150-200 degreesC, respectively. We first observed two electrical responses in the impedance and modulus formalisms. Then we detected a Debye-like relaxation in the permittivity formalism. Most interestingly, we found that the large dielectric constant of Bi2/3Cu3Ti4O12 is independent of the temperature and frequency below 150degreesC. The results are interpreted in terms of a two-layer model with conducting grains partitioned from each other by poorly conducting grain boundaries. Using this model, we attributed the two electrical responses in impedance and modulus formalisms to the grain and grain-boundary effects, respectively, while the detected Debye-like relaxation and large dielectric constant were well explained in terms of Maxwell-Wagner relaxation.
引用
收藏
页码:144106 / 1
页数:7
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