Sub-10-nm ordered structure and mechanochromism property of polyhedral oligosilsesquioxane tethered tetraphenylethylene

被引:3
|
作者
Gao, Si-Yu [1 ]
Lv, Xu-Chen [1 ]
Zheng, Jun-Feng [2 ]
Wen, Tao [3 ]
Bermeshev, Maxim, V [4 ]
Ren, Xiang-Kui [1 ,3 ,5 ]
机构
[1] Tianjin Univ, Sch Chem Engn & Technol, State Key Lab Chem Engn, Tianjin 300350, Peoples R China
[2] Nanjing Forestry Univ, Coll Chem Engn, Nanjing 210037, Peoples R China
[3] South China Univ Technol, South China Adv Inst Soft Matter Sci & Technol, Guangdong Prov Key Lab Funct & Intelligent Hybrid, Guangzhou 510640, Peoples R China
[4] Russian Acad Sci, AV Topchiev Inst Petrochem Synth, Moscow 119991, Russia
[5] South China Univ Technol, Guangdong Prov Key Lab Luminescence Mol Aggregate, Guangzhou 510640, Peoples R China
基金
中国国家自然科学基金;
关键词
Polyhedral oligosilsesquioxane; Nanostructure; Tetraphenylethylene; Mechanochromism; AGGREGATION-INDUCED EMISSION; CRYSTAL-STRUCTURE; DESIGN;
D O I
10.1016/j.giant.2022.100090
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The construction of highly ordered nanostructure plays an important role in realizing the specific functions of organic materials. However, it remains challenging to design photoelectric materials with sub-10-nm nanostructures. Herein, a novel tetraphenylethylene derivative tethered with polyhedral oligosilsesquioxane nanocages (TPE-BPOSS) was designed and synthesized. The experimental results reveal that the introduction of POSS nanocages endows TPE-BPOSS with a hierarchically sub-10-nm ordered structure composed of columnar phase of non-planar TPE cores and crystalline phase of POSS moieties. Moreover, due to the transition between the ordered and disordered structure, TPE-BPOSS can exhibit reversible mechanochromism property. It is speculated that incorporating POSS nanocages into different non-planar fluorophores may be a new strategy to prepare functional materials with sub-10-nm nanostructure and luminescent property.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Direct and Reliable Patterning of Plasmonic Nanostructures with Sub-10-nm Gaps
    Duan, Huigao
    Hu, Hailong
    Kumar, Karthik
    Shen, Zexiang
    Yang, Joel K. W.
    ACS NANO, 2011, 5 (09) : 7593 - 7600
  • [22] Nanomolding of PEG-Based Hydrogels with Sub-10-nm Resolution
    Diez, Mar
    Mela, Petra
    Seshan, Venkatash
    Moeller, Martin
    Lensen, Marga C.
    SMALL, 2009, 5 (23) : 2756 - 2760
  • [23] Assembties of carbon nanotubes and unencapsulated sub-10-nm gold nanoparticles
    Hang, Qingling
    Maschmann, Matthew R.
    Fisher, Timothy S.
    Janes, David B.
    SMALL, 2007, 3 (07) : 1266 - 1271
  • [24] Giant surfactants provide a versatile platform for sub-10-nm nanostructure engineering
    Yu, Xinfei
    Yue, Kan
    Hsieh, I-Fan
    Li, Yiwen
    Dong, Xue-Hui
    Liu, Chang
    Xin, Yu
    Wang, Hsiao-Fang
    Shi, An-Chang
    Newkome, George R.
    Ho, Rong-Ming
    Chen, Er-Qiang
    Zhang, Wen-Bin
    Cheng, Stephen Z. D.
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2013, 110 (25) : 10078 - 10083
  • [25] Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors
    Shih, Chun-Hsing
    Nguyen Van Kien
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2014, 2 (05): : 128 - 132
  • [26] Single Molecular Stamping of a Sub-10-nm Colloidal Quantum Dot Array
    Hoshino, Kazunori
    Turner, Travis C.
    Kim, Sunmin
    Gopal, Ashwini
    Zhang, Xiaojing
    LANGMUIR, 2008, 24 (23) : 13804 - 13808
  • [27] Fabrication of sub-10-nm silicon nanowire arrays by size reduction lithography
    Choi, YK
    Zhu, J
    Grunes, J
    Bokor, J
    Somorjai, GA
    JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (15): : 3340 - 3343
  • [28] Performance characterization of negative resists for sub-10-nm electron beam lithography
    Bonam, R.
    Verhagen, P.
    Munder, A.
    Hartley, J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (06): : C6C34 - C6C40
  • [29] Direct observation of fast surface dynamics in sub-10-nm nanoglass particles
    Chen, Na
    Wang, Di
    Guan, Peng Fei
    Bai, Hai Yang
    Wang, Wei Hua
    Zhang, Zheng Jun
    Hahn, Horst
    Gleiter, Herbert
    APPLIED PHYSICS LETTERS, 2019, 114 (04)
  • [30] Transport properties of sub-10-nm planar-bulk-CMOS devices
    Wakabayashi, H
    Ezaki, T
    Hane, M
    Ikezawa, T
    Sakamoto, T
    Kawaura, T
    Yamagami, S
    Ikarashi, N
    Takeuchi, K
    Yamamoto, T
    Mogami, T
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 429 - 432