Silicon nanostructures for photonics

被引：0

作者：

Pavesi, L ^{[1
]}

Bettotti, P ^{[1
]}

Cazzanelli, M ^{[1
]}

Cella, S ^{[1
]}

Daldosso, N ^{[1
]}

Dal Negro, L ^{[1
]}

Danese, B ^{[1
]}

Gaburro, Z ^{[1
]}

Oton, CJ ^{[1
]}

Pancheri, L ^{[1
]}

Prakash, GV ^{[1
]}

机构：

[1] Univ Trent, INFM, I-38050 Povo, Trento, Italy

来源：

CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanostructuring silicon is an effective way to turn silicon into a photonic material. In fact low dimensional silicon shows light amplification characteristics, non-linear optical effects, photon confinement in both one and two dimensions, photon trapping with evidences of light localization, and gas sensing properties.

引用

页码：103 / 112

页数：10

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