Monolayer Co3O4 Inverse Opals as Multifunctional Sensors for Volatile Organic Compounds

被引:44
|
作者
Lee, Chul-Soon [1 ]
Dai, Zhengfei [2 ]
Jeong, Seong-Yong [1 ]
Kwak, Chang-Hoon [1 ]
Kim, Bo-Young [1 ]
Kim, Do Hong [1 ,3 ]
Jang, Ho Won [3 ]
Park, Joon-Shik [4 ]
Lee, Jong-Heun [1 ]
机构
[1] Korea Univ, Dept Mat Sci & Engn, 145 Anam Ro, Seoul 02841, South Korea
[2] Kyoto Univ, Dept Chem, Sakyo Ward, Kyoto 6068501, Japan
[3] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci Engn, 1 Gwanak Ru, Seoul 08826, South Korea
[4] Korea Elect Technol Inst, Smart Convergence Sensor Res Ctr, 25 Saenari Ro, Songnam 13509, Gyeonggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
monolayers; nanostructures; sensors; template synthesis; thin films; SENSING CHARACTERISTICS; CATALYTIC-OXIDATION; SENSITIVE DETECTION; THIN-FILM; GAS; PERFORMANCE; NANOSTRUCTURES; FABRICATION; NANORODS; XYLENE;
D O I
10.1002/chem.201505210
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Monolayers of periodic porous Co3O4 inverse opal (IO) thin films for gas-sensor applications were prepared by transferring cobalt-solution-dipped polystyrene (PS) monolayers onto sensor substrates and subsequent removal of the PS template by heat treatment. Monolayer Co3O4 IO thin films having periodic pores (d approximate to 500 nm) showed a high response of 112.9 to 5 ppm C2H5OH at 200 degrees C with low cross-responses to other interfering gases. Moreover, the selective detection of xylene and methyl benzenes (xylene+toluene) could be achieved simply by tuning the sensor temperature to 250 and 275 degrees C, respectively, so that multiple gases can be detected with a single chemiresistor. Unprecedentedly high ethanol response and temperature-modulated control of selectivity with respect to ethanol, xylene, and methyl benzenes were attributed to the highly chemiresistive IO nanoarchitecture and to the tuned catalytic promotion of different gas-sensing reactions, respectively. These well-ordered porous nanostructures could have potential in the field of high-performance gas sensors based on p-type oxide semiconductors.
引用
收藏
页码:7102 / 7107
页数:6
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