Structural and optical properties of β-FeSi2 phase prepared by ion beam synthesis

被引：0

作者：

Ayache, R ^{[1
]}

Bouabellou, A

Eichhorn, F

Richter, E

机构：

[1] Univ Batna, Dept Pharm, Batna 05000, Algeria

[2] Univ Constantine, Lab Couches Minces & Interfaces, Constantine 25000, Algeria

[3] Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

REVIEWS ON ADVANCED MATERIALS SCIENCE | 2004年 / 8卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Semiconducting iron disilicide (beta-FeSi2) was prepared by ion beam synthesis (IBS) in (111)Si P-type by implantation at 440 degreesC of 195 KeV Fe ions with a dose of 2(.)10(17) Fe+/cm(2) followed by annealing in a N-2 atmosphere at 900 degreesC for 4 h. Characterization of samples included Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) pole figure, and Raman spectroscopy. A mixture of beta-FeSi2 and alpha-FeSi2 was observed in the as-implanted state. A Photoluminescence (PL) measurement at 12K indicates the luminescence peak at the energy of about 0.81 eV corresponding to the band gap energy of beta-FeSi2 phase.

引用

页码：97 / 100

页数：4

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