Single Event Latchup Results for COTS Devices Used on SmallSat Missions

被引：5
|
作者：
Vartanian, Sergeh [1 ]
Irom, Farokh [1 ]
Allen, Gregory R. [1 ]
Parker, Wilson P. [1 ]
O'Connor, Michael D. [1 ]
机构：
[1] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA
来源：
2020 IEEE RADIATION EFFECTS DATA WORKSHOP (IN CONJUNCTION WITH 2020 NSREC) | 2020年
关键词：
D O I：
10.1109/REDW51883.2020.9325824
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
We present single event latchup (SEL) results for a variety of microelectronic devices frequently designated for SmallSat missions. The data presented is only a small representation of all the SEL tests performed in 2019.
引用
收藏
页码：78 / 81
页数：4
相关论文
共 50 条
  • [41] Single-Event Latchup in a 7-nm Bulk FinFET Technology
    Ball, D. R.
    Sheets, C. B.
    Xu, L.
    Cao, J.
    Wen, S. -J.
    Fung, R.
    Cazzaniga, C.
    Kauppila, J. S.
    Massengill, L. W.
    Bhuva, B. L.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) : 830 - 834
  • [42] Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge
    Guagliardo, S.
    Wrobel, F.
    Aguiar, Y. Q.
    Autran, J. -L.
    Leroux, P.
    Saigne, F.
    Pouget, V.
    Touboul, A. D.
    MICROELECTRONICS RELIABILITY, 2021, 119
  • [43] Impact of Deep P-Well Structure on Single Event Latchup in Bulk CMOS
    Kato, Takashi
    Matsuyama, Hideya
    2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2015, : 365 - 368
  • [44] The study of the sensitivity of CMOS integrated circuits to single event latchup using pulsed bremsstrahlung
    Zinchenko, V. F.
    Lavrentjev, K. V.
    Ozerov, A. I.
    Semenets, B. N.
    Chlenov, A. M.
    2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2016,
  • [45] Preventing Single Event Latchup with Deep P-well on P-substrate
    Uemura, T.
    Kato, T.
    Tanabe, R.
    Iwata, H.
    Matsuyama, H.
    Hashimoto, M.
    Takahisa, K.
    Fukuda, M.
    Hatanaka, K.
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [46] Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test
    Yu, Y. -T.
    Han, J. -W.
    Feng, G. -Q.
    Cai, M. -H.
    Chen, R.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (02) : 565 - 570
  • [47] Single Event Effect prediction early in the design phase and latchup case study on ASIC
    Andrianjohany, N.
    Augustin, G.
    Coulie, K.
    Gouyet, L.
    Rahajandraibe, W.
    Chatry, N.
    Standarovski, D.
    Ecoffet, R.
    2018 18TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2018, : 60 - 67
  • [48] Effects of angle of incidence on proton and neutron-induced single-event latchup
    Schwank, J. R.
    Shaneyfelt, M. R.
    Baggio, J.
    Dodd, P. E.
    Felix, J. A.
    Ferlet-Cavrois, V.
    Paillet, P.
    Lum, G. K.
    Girard, S.
    Blackmore, E.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3122 - 3131
  • [49] Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs
    Hutson, J. M.
    Pellish, J. A.
    Tipton, A. D.
    Boselli, G.
    Xapsos, M. A.
    Kim, H.
    Friendlich, M.
    Campola, M.
    Seidleck, S.
    LaBel, K.
    Marshall, A.
    Deng, X.
    Baumann, R.
    Reed, R. A.
    Schrimpf, R. D.
    Weller, R. A.
    Massengill, L. W.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (01) : 208 - 213
  • [50] Radiation Test Results on COTS and non-COTS Electronic Devices for NASA Johnson Space Center Spaceflight Projects
    Allums, Kimberly K.
    O'Neill, Patrick M.
    Reddell, Brandon D.
    Bailey, Charles R.
    Nguyen, Kyson V.
    2012 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2012,
12345