One-step fabrication of large area arrays of dots by electron beam lithography

被引:2
|
作者
Perez-Junquera, A. [1 ]
Martin, J. I. [1 ]
Alameda, J. M. [1 ]
机构
[1] Univ Oviedo, Fac Ciencias, Dept Fis, E-33007 Oviedo, Spain
关键词
electron beam lithography; nanodots array;
D O I
10.1016/j.mee.2007.01.129
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One-step fabrication on PMMA resist of relatively large area arrays of dots by electron beam lithography (EBL) is reported when using one of the most conventional systems from Raith (TM) company. Analyzing the effect of the microscope conditions on the homogeneity and shape of the dots, it has been found that aberrations problems that appear in the dots far off from the array centre at usual working distances can be solved by carefully adjusting the microscope at a much larger working distance (WD). In these conditions, good circular dots, with a diameter of about 300 nm, can be obtained in one-step on every part of the array over 300 mu m x 300 mu m areas in write fields of 500 mu m x 500 mu m. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:845 / 847
页数:3
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