Electronic properties of the SiC-SiO2 interface and related systems

被引：0

作者：

Ouisse, T ^{[1
]}

Bano, E ^{[1
]}

机构：

[1] ENSERG, CNRS, UMR 5531, Lab Phys Composants Semicond, F-38016 Grenoble, France

来源：

CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of the SiC/SiO2 interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is pur on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO2 interface and the oxide reliability is studied.

引用

页码：101 / 110

页数：10

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