Electronic properties of the SiC-SiO2 interface and related systems

被引：0
|
作者：
Ouisse, T [1 ]
Bano, E [1 ]
机构：
[1] ENSERG, CNRS, UMR 5531, Lab Phys Composants Semicond, F-38016 Grenoble, France
来源：
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of the SiC/SiO2 interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is pur on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO2 interface and the oxide reliability is studied.
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页码：101 / 110
页数：10
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