Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate

被引：7

作者：

Bessolov, V. N. ^{[1
]}

Konenkova, E. V. ^{[1
]}

Orlova, T. A. ^{[1
]}

Rodin, S. N. ^{[1
]}

Shcheglov, M. P. ^{[1
]}

Kibalov, D. S. ^{[2
]}

Smirnov, V. K. ^{[2
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Quantum Silicon Co, Moscow 115094, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2018年 / 44卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

TECHNOLOGY;

D O I：

10.1134/S1063785018060172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101I...1Ic) epilayers deviating by an angle of about 62A degrees from the polar direction and having an X-ray rocking curve with a minimum FWHM value of omega(theta) similar to 60 arcmin.

引用

页码：525 / 527

页数：3

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