Electronic structural analysis of transparent In2O3-ZnO films by hard X-ray photoelectron spectroscopy

被引：11
|
作者：
Shibuya, Tadao [1 ]
Yoshinaka, Masahiro [1 ]
Shimane, Yukio [1 ]
Utsuno, Futoshi [1 ]
Yano, Koki [1 ]
Inoue, Kazuyoshi [1 ]
Ikenagab, Eiji [2 ]
Kim, Jung J. [2 ]
Ueda, Shigenori [3 ]
Obata, Masaaki [3 ]
Kobayashi, Keisuke [3 ]
机构：
[1] Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan
[2] Japan Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795198, Japan
[3] Natl Inst Mat Sci, Sayo, Hyogo 6795198, Japan
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 11期
关键词：
Transparent conductive oxide; Indium zinc oxide; Hard X-ray photoelectron spectroscopy; VALENCE-BAND; INDIUM;
D O I：
10.1016/j.tsf.2009.09.170
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic structural analysis of the conductive transparent films was carried out using bulk sensitive hard X-ray photoelectron spectroscopy (HAXPES) The In2O3-ZnO film has amorphous structure before and after annealed, and the conduction band spectrum around Fermi level showed the similar spectra with that of as-deposited amorphous In2O3 film In these amorphous films, the conduction band minimum locates at the deeper level than the crystalline In2O3 film The electronic state which comes from randomness of amorphous structure possibly exists around this level or below. These electrons are expected to act as scattering center We concluded that the electron mobility depends on the density of this electronic state (C) 2009 Elsevier B V All rights reserved.
引用
收藏
页码：3008 / 3011
页数：4
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