A Novel Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

被引：14

作者：

Zhu, Zhengyong ^{[1
]}

Zhu, Huilong ^{[1
]}

Xu, Miao ^{[1
]}

Zhong, Jian ^{[1
]}

Zhao, Chao ^{[1
]}

Chen, Dapeng ^{[1
]}

Ye, Tianchun ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2014年 / 13卷 / 06期

关键词：

Band-to-band tunneling (BTBT); fin; novel fin electron-hole bilayer tunnel field-effect transistor (FinEHBTFET); subthreshold swing (SS); tunnel field-effect transistor (TFET); FET; ENERGY;

D O I：

10.1109/TNANO.2014.2342765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel fin electron-hole bilayer tunnel field-effect transistor (FinEHBTFET) is proposed and investigated by simulation. In this structure, a narrow fin is placed at the middle of a conventional p(+) -i-n(+) tunnel field-effect transistor, and two separate gates formed on left and right sides of the fin are used to control the channel. The FinEHBTFET achieves drive current when band-to-band tunneling happens between the bias-induced electron-hole bilayer at the two sides of the fin. The FinEHBTFET shows a high I-on/I-off ratio more than 10(6), and an average SS of 3 mV/dec over three decades of drain current.

引用

页码：1133 / 1137

页数：5

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