Passivation of uranium towards air corrosion by N2+ and C+ ion implantation

被引:48
|
作者
Arkush, R
Mintz, MH
Shamir, N
机构
[1] Nucl Res Ctr Negev, IL-84190 Beer Sheva, Israel
[2] Ben Gurion Univ Negev, Dept Nucl Engn, IL-84105 Beer Sheva, Israel
关键词
D O I
10.1016/S0022-3115(00)00335-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The passivation of uranium surfaces against air corrosion, by ion implantation processes was studied, using surface analysis methods. Implanting 45 keV N-2(+) and C+ ions produces thin modified surface layers with gradual gradients of the corresponding compounds (i.e., nitrides and carbides, respectively), which avoid the formation of discontinuous interfaces typical to coatings. Such gradual interfaces impart excellent mechanical stability and adhesion to the modified layers, in spite of the large misfit between the metal substrate and the implantation on induced compounds. It turns out that these layers provide an almost absolute protection against air corrosion. A rapid initial stage of oxidation of the modified surface layers takes place, forming very thin protective oxidation zones (1-4 nm thick), which practically stop further air oxidation for years. The mechanism of the initial oxidation stage of the modified layers seems to vary with the type of surface (i.e., either nitrides or carbides). However, in any case the protection ability of the formed oxidation products is excellent, probably due to the close match between these compounds and the underlying nitrides or carbides. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:182 / 190
页数:9
相关论文
共 50 条
  • [31] DIAMOND SYNTHESIS - INTERNAL GROWTH DURING C+ ION-IMPLANTATION
    NELSON, RS
    HUDSON, JA
    MAZEY, DJ
    PILLER, RC
    PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1983, 386 (1790): : 211 - &
  • [32] The trapping of N2 molecules and the reduction in its bonding length in Ge(001) due to N2+ ion implantation
    Lee, Young Mi
    Yun, Won Seok
    Hong, Soon Cheol
    Jung, Min-Cherl
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
  • [33] Investigation of silicon oxynitride structure obtained by an ion implantation of O2+ and N2+ in Si(100)
    Bondarchuk, A.B.
    Goysa, S.N.
    Gonchar, N.N.
    Koval, I.F.
    Nakhodkin, N.G.
    Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66 (01): : 124 - 126
  • [34] Investigation of silicon oxynitride structure obtained by an ion implantation of O2+ an N2+ in Si(100)
    Bondarchuk, AB
    Goysa, SN
    Gonchar, NN
    Koval, IF
    Nakhodkin, NG
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (01): : 124 - 125
  • [35] Contributions of N+, N2+, NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films
    Li, Zebin
    Liang, Rongqing
    Ou, Qiongrong
    Zhang, Shuyu
    He, Long
    Chang, Xijiang
    Wu, Xiaojing
    Wu, Zhonghang
    He, Zhijiang
    Gao, Huanzhong
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2011, 39 (02) : 711 - 716
  • [36] Effects of N2+ ion implantation on phase transition in Ge2Sb2Te5 films
    Kim, YoungKuk
    Baeck, J. H.
    Cho, M. -H.
    Jeong, E. J.
    Ko, D. -H.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)
  • [37] CONTROL OF POLYCRYSTALLINE-SILICON RESISTOR BY IMPLANTATION OF N2+
    HAYASHI, H
    YAMOTO, H
    OHSHIMA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C101 - C101
  • [38] Nucleation and growth of AlN nanocrystallites prepared by N2+ implantation
    Reier, T
    Schultze, JW
    Osterle, W
    Buchal, C
    SURFACE & COATINGS TECHNOLOGY, 1998, 104 : 415 - 420
  • [39] Effect of N2+ Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs
    Kulik, M.
    Surowiec, Z.
    Rzodkiewicz, W.
    Filiks, J.
    Drozdziel, A.
    ACTA PHYSICA POLONICA A, 2015, 128 (05) : 918 - 922
  • [40] Effect of ion mixing by C+ implantation on friction and adhesion of amorphous carbon film on SiO2
    Xu, T
    Lu, JJ
    Yang, SR
    Xue, QJ
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 284 (1-2): : 51 - 55