First-principles theory of dilute magnetic semiconductors

被引:961
|
作者
Sato, K. [1 ]
Bergqvist, L. [2 ]
Kudrnovsky, J. [3 ]
Dederichs, P. H. [4 ]
Eriksson, O. [2 ]
Turek, I. [5 ]
Sanyal, B. [2 ]
Bouzerar, G. [6 ]
Katayama-Yoshida, H. [1 ]
Dinh, V. A. [7 ]
Fukushima, T. [8 ]
Kizaki, H. [1 ]
Zeller, R. [4 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
[2] Uppsala Univ, Dept Phys & Astron, SE-75120 Uppsala, Sweden
[3] Acad Sci Czech Republ, Inst Phys, CZ-18221 Prague 8, Czech Republic
[4] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[5] Acad Sci Czech Republ, Inst Phys Mat, CZ-61662 Brno, Czech Republic
[6] CNRS, Inst Neel, MCBT, F-38042 Grenoble, France
[7] Natl Inst Mat Sci, Computat Mat Sci Ctr, Tsukuba, Ibaraki 3050047, Japan
[8] Univ Aquila, CNR, INFM, Dept Phys, I-67010 Laquila, Abruzzo, Italy
基金
瑞典研究理事会; 美国国家科学基金会;
关键词
HIGH-CURIE-TEMPERATURE; COHERENT-POTENTIAL APPROXIMATION; POLARIZED ELECTRONIC-STRUCTURE; INTERSTITIAL IRON IMPURITY; TRANSPARENT THIN-FILMS; EXCHANGE INTERACTIONS; MATERIALS DESIGN; GROUND-STATE; AB-INITIO; SPINODAL-DECOMPOSITION;
D O I
10.1103/RevModPhys.82.1633
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This review summarizes recent first-principles investigations of the electronic structure and magnetism of dilute magnetic semiconductors (DMSs), which are interesting for applications in spintronics. Details of the electronic structure of transition-metal-doped III-V and II-VI semiconductors are described, especially how the electronic structure couples to the magnetic properties of an impurity. In addition, the underlying mechanism of the ferromagnetism in DMSs is investigated from the electronic structure point of view in order to establish a unified picture that explains the chemical trend of the magnetism in DMSs. Recent efforts to fabricate high-TC DMSs require accurate materials design and reliable TC predictions for the DMSs. In this connection, a hybrid method (ab initio calculations of effective exchange interactions coupled to Monte Carlo simulations for the thermal properties) is discussed as a practical method for calculating the Curie temperature of DMSs. The calculated ordering temperatures for various DMS systems are discussed, and the usefulness of the method is demonstrated. Moreover, in order to include all the complexity in the fabrication process of DMSs into advanced materials design, spinodal decomposition in DMSs is simulated and we try to assess the effect of inhomogeneity in them. Finally, recent works on first-principles theory of transport properties of DMSs are reviewed. The discussion is mainly based on electronic structure theory within the local-density approximation to density-functional theory.
引用
收藏
页码:1633 / 1690
页数:58
相关论文
共 50 条
  • [41] First-principles predictions of Hall and drift mobilities in semiconductors
    Ponce, Samuel
    Macheda, Francesco
    Margine, Elena Roxana
    Marzari, Nicola
    Bonini, Nicola
    Giustino, Feliciano
    PHYSICAL REVIEW RESEARCH, 2021, 3 (04):
  • [42] First-principles approach to the understanding of π-conjugated organic semiconductors
    Peter Puschnig
    Claudia Ambrosch-Draxl
    Monatshefte für Chemie - Chemical Monthly, 2008, 139 : 389 - 399
  • [43] A review of first-principles calculation methods for defects in semiconductors
    Li Chen-Hui
    Zhang Chen
    Cai Xue-Fen
    Zhang Cai-Xin
    Yuan Jia-Yi
    Deng Hui-Xiong
    ACTA PHYSICA SINICA, 2024, 73 (06)
  • [44] First-principles approach to the understanding of π-conjugated organic semiconductors
    Puschnig, Peter
    Ambrosch-Draxl, Claudia
    MONATSHEFTE FUR CHEMIE, 2008, 139 (04): : 389 - 399
  • [45] FIRST-PRINCIPLES CALCULATIONS OF THE PHONON-SPECTRUM IN SEMICONDUCTORS
    LEE, IH
    CHEONG, BH
    CHANG, KJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1995, 28 : S267 - S272
  • [46] Piezoelectricity in binary wurtzite semiconductors: a first-principles study
    Zhao, Ling-Xu
    Liu, Jian
    APPLIED PHYSICS EXPRESS, 2021, 14 (12)
  • [47] FIRST-PRINCIPLES CALCULATION OF GA-BASED SEMICONDUCTORS
    AGRAWAL, BK
    YADAV, PS
    KUMAR, S
    AGRAWAL, S
    PHYSICAL REVIEW B, 1995, 52 (07): : 4896 - 4903
  • [48] Issues in first-principles calculations for defects in semiconductors and oxides
    Nieminen, Risto M.
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2009, 17 (08)
  • [49] First-principles optical response of semiconductors and oxide materials
    Bernasconi, Leonardo
    Tomic, Stanko
    Ferrero, Mauro
    Rerat, Michel
    Orlando, Roberto
    Dovesi, Roberto
    Harrison, Nicholas M.
    PHYSICAL REVIEW B, 2011, 83 (19):
  • [50] First-principles prediction of a new class of ferromagnetic semiconductors
    Zhao, YJ
    Freeman, AJ
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 246 (1-2) : 145 - 150