Conduction mechanisms in boron implanted diamond films

被引:21
|
作者
Fontaine, F
Gheeraert, E
Deneuville, A
机构
[1] Lab. d'Etud. Proprietes Electron. S., CNRS, University Joseph Fourier, 38042 Grenoble Cedex
关键词
ion implantation; defects; electrical conductivity; boron doping;
D O I
10.1016/0925-9635(95)00383-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The relationship between variable range hopping (VRH) below 300 K and the defects created during 10(13)-10(16) cm(-2) boron ion implantation at 77 K in as-implanted diamond films and films annealed at 800 degrees C is investigated with the help of electron spin resonance (ESR) and optical measurements. The onset D-p=2 X 10(15) cm(-2) of the VRH conduction is attributed to a percolation threshold, and is lower than the amorphization dose D-a=4 x 10(15) cm(-2). From ESR and optical absorption, implantation creates sp(3) carbon dangling bonds (paramagnetic and which act as hopping centres) below D-p and sp(2) bonds (which cause metallic conduction and optical absorption) above D-a. The hopping conduction takes place between localized levels from sp(3) carbon dangling bonds, but only a small proportion of the sp(3) defects participates in this conduction.
引用
收藏
页码:752 / 756
页数:5
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