A study of optical and ESR radiation-induced absorptions in TeO2 single crystals

被引：1
|
作者：
Kappers, LA [1 ]
Gilliam, OR
Bartram, RH
Földvári, I
Watterich, A
机构：
[1] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
[2] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
[3] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1121 Budapest, Hungary
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1999年 / 150卷 / 1-4期
基金：
美国国家科学基金会;
关键词：
paratellurite; gamma and electron irradiations; point defects; ESR and optical absorptions; growth and thermal decays;
D O I：
10.1080/10420159908226224
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Gamma-ray and 1.5-MeV electron irradiations are employed in the temperature range 25-175 degrees C to produce radiation effects in undoped paratellurite (alpha-TeO2) single crystals. Optical absorption and ESR techniques are used to study the growth and annealing of point defects, and spectroscopic observations by these two methods are compared. Pulse-annealing experiments are reported over the range 100-500 degrees C. The TeO2 crystal shows much more susceptibility to radiation damage at the higher irradiation temperatures.
引用
收藏
页码：161 / 166
页数：6
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