Aspects of Applying Flip-Chip Technology for SiC Power Devices Assembly

被引：0

作者：

Mysliwiec, Marcin ^{[1
,2
]}

Guziewicz, Marek ^{[2
]}

Kisiel, Ryszard ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Warsaw, Poland

[2] Inst Electr Mat Technol, Warsaw, Poland

来源：

2013 PROCEEDINGS OF THE 36TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY (ISSE) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of our paper is to consider the possibility of applying flip-chip technology for assembly of SiC Schottky diode into a ceramic package. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag or Au balls were used as flip-chip connection material. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package in comparison with bare SiC diode.

引用

页码：90 / 93

页数：4

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