Preparation and characterisation of carbon nitride films deposited by pulsed laser arc deposition

被引：3
|
作者：
Yin, L. [1 ]
Shao, T. M. [1 ]
Wei, S. B. [1 ]
Zhou, Y. Q. [1 ]
机构：
[1] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
来源：
INTERNATIONAL JOURNAL OF SURFACE SCIENCE AND ENGINEERING | 2010年 / 4卷 / 03期
基金：
中国国家自然科学基金;
关键词：
carbon nitride film; pulsed laser arc deposition; nanohardness; friction coefficient;
D O I：
10.1504/IJSURFSE.2010.033252
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
Carbon nitride (CNx) films were prepared on silicon substrates by pulsed laser arc deposition with different working gases and various gas pressures. The bonding structure and the chemical compositions of the resulting CNx films were studied by AES, Raman spectroscope and XPS, respectively. The results showed that the average nitrogen content varied between 9% and 28%, and masses of sp(2) C-N bond and sp(3) C-N bond formed in the CNx films. The nanohardness decreased from 30 GPa to 6 GPa, whereas the friction coefficient increased with increasing nitrogen content in the resulting CNx films.
引用
收藏
页码：250 / 257
页数：8
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