Electrical and optica properties of SiOC films with low dielectric constant

被引：0
|
作者：
Yu, YH [1 ]
Ko, HJ [1 ]
Choi, CK [1 ]
机构：
[1] Jeju Natl Univ, Dept Phys, Cheju 690756, South Korea
来源：
ADVANCES IN NONDESTRUCTIVE EVALUATION, PT 1-3 | 2004年 / 270-273卷
关键词：
low-k material; amorphous; thin-film; PECVD; SiOC;
D O I：
10.4028/www.scientific.net/KEM.270-273.814
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have prepared the SiOC film by ICPCVD method. The carbon concentration in SiOC film is controlled with a mixture of bis-trimethylsilylmethane (BTMSM) and oxygen gases. We have studied the relation between the carbon concentration and the optical band-gap, relation between the optical band gap and the dielectric constant. The optical band gap increased with carbon concentration and the dielectric constant decreases as the optical band gap increases. The mechanism of lowering dielectric constant with energy gap was discussed by using Penn Model.
引用
收藏
页码：814 / 819
页数：6
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