Study of ZnCdSe/ZnSe quantum-wells grown by molecular-beam epitaxy on ZnSe substrates

被引：0

作者：

Kozlovsky, VI

Trubenko, PA

Dianov, EM

Korostelin, YV

Krysa, AB

Shapkin, PV

机构：

[1] Russian Acad Sci, GPI, Fiber Opt Res Ctr, Moscow 117942, Russia

[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117942, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

ZnSe; homoepitaxy; ZnCdSe/ZnSe MQW; cathodoluminescence; VCSEL;

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnCdSe/ZnSe multiple quantum-well(MQW) structures were grown by MBE on ZnSe(0 0 1) substrates prepared by seeded chemical-vapour transport (SCVT) in hydrogen. Scanning force microscopy (SFM) analysis of these structures was performed. A method for the preparation of the substrate surface was found that resulted in a decrease of the root-mean-square (RMS) roughness of the MQW structure surfaces, down to 1 nm. For these structures intense cathodoluminescence (CL) from the QWs was observed. By e-beam pumping a microcavity, pulse lasing was achieved at room temperature(RT). (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：872 / 876

页数：5

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